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2N5495 전자부품 데이터시트



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기능 검색 결과



2N5495  

INCHANGE
INCHANGE

2N5495

Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5495 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS ·Designed for a wide variet




관련 부품 2N54 상세설명

2N5466  

  
Bipolar NPN Device

2N5466 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 400



Seme LAB
Seme LAB

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2N5432  

  
Trans JFET N-CH 400mA 3-Pin TO-52



New Jersey Semiconductor
New Jersey Semiconductor

PDF



2N5432  

  
N-Channel Silicon Junction Field-Effect Transistor

8/2014 2N5432, 2N5433, 2N5494 N-Channel Silicon Junction Field-Effect Transistor ∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -25V Continuous Forward Gate Current 100 mA Continuous Device Power D



InterFET
InterFET

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2N5446  

  
40A Silicon Triacs



Solid State
Solid State

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2N5458  

  
Diode ( Rectifier )



American Microsemiconductor
American Microsemiconductor

PDF



2N5427  

  
Bipolar NPN Device

2N5427 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 80V IC = 7A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (



Seme LAB
Seme LAB

PDF




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