2N5495
INCHANGE
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5495
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min) ·Low Saturation Voltage-
: VCE (sat)= 1V(Max)@IC= 3A
APPLICATIONS ·Designed for a wide variet
2N5466
Bipolar NPN Device
2N5466
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 400
Seme LAB
PDF
2N5432
N-Channel Silicon Junction Field-Effect Transistor8/2014
2N5432, 2N5433, 2N5494
N-Channel Silicon Junction Field-Effect Transistor
∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -25V
Continuous Forward Gate Current
100 mA
Continuous Device Power D
InterFET
PDF
2N5427
Bipolar NPN Device2N5427
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 80V IC = 7A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 (
Seme LAB
PDF