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Datasheet 2N5429 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N5429 | Bipolar NPN Device 2N5429
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 80V IC = 7A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 ( |
 Seme LAB |
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| 3 | 2N5429 | POWER TRANSISTORS(7A/40W) A
A
A
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 Mospec Semiconductor |
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| 2 | 2N5429 | (2N5427 / 2N5429) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications.
PINNING(see Fig.2) PIN 1 2 3 Base Em |
 SavantIC |
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| 1 | 2N5429 | Trans GP BJT NPN 100V 7A 3-Pin(2+Tab) TO-66 Sleeve |
 New Jersey Semiconductor |
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