2N5408
SSDI
PNP Transistor5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3175 2N3187 2N3195 2N49
2N5433
(2N5xxx) JFETN-Channel Metal Can JFET’s
Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S &
2N5432 2N5433 2N5434 25
4.0 3.0 1.0
10.0
Part No.
w
w
2N3684 2N3686 2N3822
w
.D
BV GSS Min. (V) 50 50 50 40 35 30 30 30 25
at
h S a
(V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0
ee
9.0 4.0
U 4 t
5 5 5 VP @
.c
Taitron Components
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2N5466
Bipolar NPN Device
2N5466
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 400
Seme LAB
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2N5432
N-Channel Silicon Junction Field-Effect Transistor8/2014
2N5432, 2N5433, 2N5494
N-Channel Silicon Junction Field-Effect Transistor
∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -25V
Continuous Forward Gate Current
100 mA
Continuous Device Power D
InterFET
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