2N5348
SSDI
NPN Transistor7 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N6288
7
30
30 150 Note
2N5345A
Bipolar PNP Device2N5345A
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
14.48 (0.570) 14.99 (0.590)
2
0.71 (0.028) 0.86 (0.034)
Seme LAB
PDF
2N5320
COMPLEMENTARY SILICON SWITCHING TRANSISTORS2N5320 2N5321 NPN 2N5322 2N5323 PNP
COMPLEMENTARY SILICON SWITCHING TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier an
Central Semiconductor
PDF
2N5303
Bipolar NPN Device2N5303
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10
Seme LAB
PDF