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Datasheet 2N4957 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N4957 | HIGH FREQUENCY TRANSISTOR 2N4957 2N4958 2N4959 2N5829
2N4957 JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C |
 Motorola Semiconductors |
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| 3 | 2N4957 | Chip Type 2C4957 Geometry 0006 Polarity PNP Data Sheet No. 2N4957
Type 2N4957
Geometry 0006 Polarity PNP Qual Level: JAN - JANS
Features: • • • • Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits s |
 Semicoa Semiconductor |
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| 2 | 2N4957 | Trans GP BJT PNP 30V 0.03A 4-Pin TO-72 |
 New Jersey Semiconductor |
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| 1 | 2N4957UB | Type 2N4957UB Geometry 0006 Polarity PNP Data Sheet No. 2N4957UB
Type 2N4957UB
Geometry 0006 Polarity PNP Qual Level: JAN - JANTXV
Features: • • • • Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a cersot case. Also available in chip form using the 0006 chip geometry. The Min and Max l |
Semicoa Semiconductor |
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