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Datasheet 2N4360 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2N4360 | LOW-FREQUENCY/LOW-NOISE JFET 2N4360
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage
Gate-Source Voltage
@Total Device Dissipation T^ = 25°C
Derate above 25°C Storage Temperature Range
Symbol vDs Vdg vgs Pd
T stg
Value 20 20 20 310 2.82
-55 to +125
Unit
Vdc Vdc Vdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS ( |
 Motorola Semiconductors |
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| 1 | 2N4360 | P-CHANNEL FIELD EFFECT TRANSISTORS <^£mi-Conauctoi t-Proaucts., Una.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081
UlSA 2N4342 - 2N4343 - 2N4360
TELEPHONE: (973) 376-2922 (212) 227-6005
FAX: (973) 376'8960
P-CHANNEL FIELD EFFECT TRANSISTORS DIFUSSED SILICON PLAN.4R TRANSSITORS
• LOW NOISE VOLTAGE -• 0,08 uV//Hz (MAX) @ 100 Hz |
 New Jersey Semiconductor |
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