2N4341
Solitron Devices
(2N4xxx) Low Power Field Effect Transistorsw
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
2N4341
Siliconix
N-Channel JFETN-Channel JFETs
2N4338/4339/4340/4341
Product Summary
Part Number
2N4338 2N4339 2N4340 2N4341
VGS(off) (V) –0.3 to –1 –0.6 to –1.8 –1 to –3 –2 to –6
V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) –50 0.6 0.6 –50 0.8 1.5 –50 1.3 3.6 –5
2N4341
Motorola Semiconductors
N-CHANNEL JFETMAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Reverse Gate-Source Voltage Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C Storage Temperature Range
Symbol vDs Vdg vgs vgsr
lG
pd
Tstg
Value 50 50 50 50
2N4341
Calogic LLC
N-Channel JFET Low Noise AmplifierN-Channel JFET Low Noise Amplifier
CORPORATION
2N4338 – 2N4341
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Gate Current . . . . . . . . . . . . . . . . . . . . .
2N4341
Vishay
N-Channel JFETs2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338 2N4339 2N4340 2N4341
VGS(off) (V)
–0.3 to –1 –0.6 to –1.8
–1 to –3 –2 to –6
V(BR)GSS Min (V) gfs Min (mS)
–50 0.6 –50 0.8 –50 1.3 –50 2
IDSS