2N3967
Taitron Components
Junction(2N3xxx) -Gate Field-Effect Transistor BV
GSS
VP Max. (V) 5.0 2.0 6.0 3.0 6.0 6.0 6.0 5.0 6.0
@
VD S (V) 20 20 15 10 15 15 10 20 10
&
ID Min. (nA) 1.0 1.0 0.5 1.0 1.0 1.0 10.0 1.0 1.0 (mmho) 2.00 1.00 3.00 0.08 2.50 -
Gfs Max. (mmho) 3.00 2.00 6.50 0.25 -
Part No.
Min. (
2N3947
Bipolar NPN Device2N3947
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar NPN Device.
VCE
Seme LAB
PDF
2N3962
Bipolar PNP Device2N3962
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar PNP Device.
VCE
Seme LAB
PDF