2N3906SC
EPITAXIAL PLANAR PNP TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N3906SC
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50m
KEC
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2N3902
NPN High Power Silicon Transistors2N3902 & 2N5157
NPN High Power Silicon Transistors
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Test Conditions
Symbol Units
Off Characteristics Collector - Emitter Cutoff Current
VCE = 400 Vdc, 2N3
MA-COM
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2N3905
Si-Epitaxial PlanarTransistors2N3905, 2N3906 PNP
Version 2004-01-20
Switching Transistors Si-Epitaxial PlanarTransistors PNP
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert
Standard Pinning 1
Diotec Semiconductor
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