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Datasheet 2N3866A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2N3866A | HIGH FREQUENCY TRANSISTOR 2N3866 2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation Ca Jq = 25°C Derate above 25°C
Storage Temperature
Symbol VCEO VCBO VEBO
'c
PD
T stg
Value 30 55 3.5 0.4 5.0 28.6
-65 to +200
Uni |
 Motorola Semiconductors |
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| 5 | 2N3866A | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N3866A
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N3866A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC 400 mA
VCE PDISS
TJ TSTG θJC
30 V 5.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC
35 OC/W
PACKAGE STYLE TO-39
1 = |
 ASI |
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| 4 | 2N3866A | Type 2N3866A Geometry 1007 Polarity NPN Data Sheet No. 2N3866A
Type 2N3866A
Geometry 1007 Polarity NPN Qual Level: JAN - JANS
Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-P |
 Semicoa Semiconductor |
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| 3 | 2N3866A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N3866 / 2N3866A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Ga |
 Microsemi Corporation |
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