2N3792
Comset Semiconductor
(2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORSPNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS
The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N37
2N3792
MOSPEC
(2N3789 - 2N3792) Silicon PNP Power TransistorA
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2N3792
Microsemi
PNP HIGH POWER SILICON TRANSISTORTECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/379
Devices
2N3791
2N3792
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
2N3792
Central Semiconductor
PNP POWER TRANSISTORS2N3789 2N3791 2N3790 2N3792
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed
2N3792
Seme LAB
PNP SILICON EPITAXIAL BASE POWER TANSISTORS2N3792
MECHANICAL DATA Dimensions in mm(inches)
40.01 (1.575) Max.
PNP SILICON EPITAXIAL BASE POWER TANSISTORS
26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls.
22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.17
2N3792
Multicomp
Power TransistorPower Transistor
Description:
PNP silicon power transistor in a TO-3 package. Designed for medium-speed switching and amplifier applications.
Features:
• Excellent Safe Operating Areas • hFE (Min) 25 and 50 @ IC = 1A
PNP
Absolute Maximum Ratings
P