2N3789
Comset Semiconductor
(2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORSPNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS
The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N37
2N3789
MOSPEC
(2N3789 - 2N3792) Silicon PNP Power TransistorA
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2N3789
Seme LAB
Bipolar PNP Device2N3789
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.
2N3789
Central Semiconductor
PNP POWER TRANSISTORS2N3789 2N3791 2N3790 2N3792
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed
2N3789
Inchange Semiconductor
Silicon PNP Power Transistorisc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3789
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation