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PNP 2N3636 – 2N3637 SILICON PLANAR RF TRANSISTORS The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case. They are intended for high voltage switching and Low Power Amplifier. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC Ratings Collector-Emitter Voltage (I
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=
2N3636 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (T
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N3634 2N3636
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3636/L 2N3635/L 2N
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