2N3570
Advanced Semiconductor
NPN SILICON HIGH FREQUENCY TRANSISTOR2N3570
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC VCB VCE VEB PDISS TJ TSTG θJC
O O
PACKAGE STYLE TO- 72
50 mA 30 V 15 V 3.0 V 200 mW @ T
2N3511
SWITCHING TRANSISTORMAXIMUM RATINGS
Rating CoHector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
2N35T0 2N3511
Motorola Semiconductors
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2N3584
(2N3583 - 2N3585) NPN SILICON POWER TRANSISTORSNPN 2N3583 – 2N3584 – 2N3585
NPN SILICON POWER TRANSISTORS.
The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and
Comset Semiconductor
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