2N3439
Comset Semiconductor
(2N3439 / 2N3440) High Voltage TransistorNPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR
C
The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These dev
2N3439
TRANSYS
(2N3439 / 2N3440) NPN HIGH VOLTAGE SILICON TRANSISTORSTransys
Electronics
L I M I T E D
NPN HIGH VOLTAGE SILICON TRANSISTORS
2N3439 2N3440 TO-39
High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DES
2N3439
Seme LAB
HIGH VOLTAGE NPN TRANSISTORS2N3439 2N3440
MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
HIGH VOLTAGE NPN TRANSISTORS
FEATURES
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
• DUAL SILICON
2N3439
ON Semiconductor
Low Power Transistor2N3439
Product Preview Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA =
2N3439
CDIL
NPN HIGH VOLTAGE SILICON TRANSISTORSContinental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON TRANSISTORS
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100
2N3439 2N3440 TO-39
High Voltage Silicon Planar Transistors used in Hi
2N3439
Microsemi Corporation
NPN LOW POWER SILICON TRANSISTORTECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368 Devices 2N3439 2N3439L 2N3440 2N3440L Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
2N3439
Motorola Semiconductors
NPN TransistorMAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current
Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Total De