파트넘버.co.kr 2N3176 데이터시트 검색

2N3176 전자부품 데이터시트



2N3176 전자부품 회로 및
기능 검색 결과



2N3176  

SSDI
SSDI

2N3176

PNP Transistor

5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N3175 2N3187 2N3195 2N49




관련 부품 2N31 상세설명

2N3174  

  
Bipolar PNP Device

2N3174 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10



Seme LAB
Seme LAB

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2N3114CSM  

  
SILICON PLANAR EPITAXIAL NPN TRANSISTOR

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwis



TT
TT

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2N3114CSM  

  
Bipolar NPN Device

2N3114CSM Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surf



Seme LAB
Seme LAB

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2N3173  

  
Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3173 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA



Inchange Semiconductor
Inchange Semiconductor

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2N3114  

  
NPN Transistor

OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com



Texas
Texas

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2N3172  

  
Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3172 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA



Inchange Semiconductor
Inchange Semiconductor

PDF




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