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2N3174 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwis
2N3114CSM Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surf
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3173 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA
OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3172 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA
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