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2N3055 데이터시트 검색 결과

번호 파트넘버 2N3055 기능 및 상세설명 제조사 PDF
39 2N3055     (2N3055 / 2N3056) Bipolar NPN Device

2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0
Seme LAB
Seme LAB
2N3055
38 2N3055     (2N3055 / 2N3056) Bipolar NPN Device

2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0
Seme LAB
Seme LAB
2N3055
37 2N3055     15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emi
Motorola  Inc
Motorola Inc
2N3055
36 2N3055     Complementary Power Transistors

2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) a
Multicomp
Multicomp
2N3055
35 2N3055     COMPLEMENTARY SILICON POWER TRANSISTORS

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Aud
STMicroelectronics
STMicroelectronics
2N3055
34 2N3055     COMPLEMENTARY SILICON POWER TRANSISTORS

Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com
Boca Semiconductor Corporation
Boca Semiconductor Corporation
2N3055
33 2N3055     COMPLEMENTARY SILICON POWER TRANSISTORS

2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a he
CENTRAL SEMICONDUCTOR
CENTRAL SEMICONDUCTOR
2N3055
32 2N3055     Complementary Silicon Power Transistors

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • C
ON Semiconductor
ON Semiconductor
2N3055


전자부품 판매 정보

국내 판매점 디바이스마트 IC114 엘레파츠 ICbanQ
해외 판매점 Mouser Electronics DigiKey Electronics Element14
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