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Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production data Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 80 V 1A > 100 -65°C to +200°C ■ ■ ■ ■ ■ Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred p
2N3019 Low Power Transistor NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Va
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amp
Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissip
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