2N3019
Comset Semiconductor
(2N3019 / 2N3020) SILICON PLANAR EPITAXIAL TRANSISTORSNPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Co
2N3019
Semicoa Semiconductor
Chip Type 2C3019 Geometry 4500 Polarity PNPData Sheet No. 2N3019
Type 2N3019
Geometry 4500 Polarity NPN Qual Level: JAN - JANS
Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case. Also available in chip form using the 4500 chip geomet
2N3019
Microsemi
LOW POWER NPN SILICON TRANSISTORTECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices 2N3019 2N3019S
2N3057A
2N3700 2N3700S
Qualified Level JAN
JANTX JANTXV
JANS
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Volt
2N3019
ON Semiconductor
Low Power Transistor2N3019
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless oth
2N3019
NXP Semiconductors
NPN medium power transistorDISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N3019 NPN medium power transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19
Philips Semiconductors
Product specification
NPN me