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Datasheet 2N3012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N3012 | SWITCHING TRANSISTOR 2N3012
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N869A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
@Total Devi |
 Motorola Semiconductors |
 |
| 3 | 2N3012 | Bipolar PNP Device Dimensions in mm (inches).
m o .c U 4 t e e h S a at .D w w w
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
2N3012
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package.
0.48 (0.019) 0.41 (0.016) dia.
2.54 (0.100) Nom.
1 – Emitter
Parameter VCEO* IC(CONT) hFE ft
Test Conditi |
 Seme LAB |
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| 2 | 2N3012 | Small Signal Transistors Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV
hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns)
MIN MAX
MAX
MAX MIN MAX MAX
toff (ns)
MAX
2N2896 NPN AMPL/S |
 Central Semiconductor |
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| 1 | 2N3012CSM | Bipolar PNP Device Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004)
2.54 ± 0.13 (0.10 ± 0.005)
m o .c U 4 t e e h S a at .D w w w
0.31 rad. (0.012)
2N3012CSM
3
2
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005)
1 – Base
Parameter VCEO* IC(CONT) hFE ft
Test Conditions
@ 0.5/30m (VCE / IC) |
Seme LAB |
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