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Datasheet 28C256 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 28C256 | 256K 32K x 8 Paged CMOS E2PROM AT28C256
Features
• • • • • • • • • • •
Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum 1 to 64-Byte Page Write Operation Lo |
 ATMEL Corporation |
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| 3 | 28C256 | 5 Volt / Byte Alterable E2PROM X28C256 256K
X28C256
5 Volt, Byte Alterable E2PROM
32K x 8 Bit
FEATURES
DESCRIPTION
The X28C256 is an 32K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C256 is a 5V only device. The X28C |
 Xicor |
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| 2 | 28C256 | 32K-Bit Parallel E2PROM CAT28C256
32K-Bit Parallel E2PROM FEATURES
s Fast Read Access Times: 120/150ns s Low Power CMOS Dissipation: s Hardware and Software Write Protection s Automatic Page Write Operation:
–Active: 25 mA Max. –Standby: 150 µA Max.
s Simple Write Operation:
–1 to 64 Bytes in 5ms –Page Load Time |
 Catalyst |
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| 1 | 28C256T | 256K EEPROM (32K x 8-Bit) EEPROM 28C256T
256K EEPROM (32K x 8-Bit) EEPROM
VCC GND DATA INPUTS/OUTPUTS I/O0 - I/O7
OE WE CE OE, CE, and WE LOGIC
DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX
ADDRESS INPUTS
Y DECODER
X DECODER IDENTIFICATION
Logic Diagram
Memory
FEATURES:
• RAD-PAK® radiation-har |
 Maxwell Technologies |
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