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Datasheet 23N50E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 23N50E    FMH23N50E

FMH23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI PO
 Fuji Electric
Fuji Electric		 datasheet 23N50E pdf

23N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
23N50E

FMH23N50E

FMH23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche
 Fuji Electric
Fuji Electric		 datasheet pdf - Fuji Electric
23NM60N

STB23NM60N

STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET Features Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allow
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
23NM50N

N-channel Power MOSFET

STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET Features Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A ■ 100% avalanche te
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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