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UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary 22A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N10 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switch
UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch o
HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr IXFH 22N55 VDSS ID (cont) RDS(on) trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg TL M d Weight Symbol V DSS VGS(th) I GSS I DSS RDS(on
UNISONIC TECHNOLOGIES CO., LTD 22N60 HEXFET POWER MOSFET DESCRIPTION Power MOSFET As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app
STB22NM60N, STF22NM60N, STI22NM60N STP22NM60N, STW22NM60N N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247 Features Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max. < 0
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