Datasheet 20N60BD1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	20N60BD1	Hiperfast(tm) Igbt HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Tra	IXYS Corporation

20N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
20N60C3	HGTG20N60C3 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input imped	Intersil Corporation
20N60	600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allow	Unisonic Technologies
20N60S5	SPP20N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP20N60S5 V	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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