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Datasheet 20N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 20N60 | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N60
20A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta |
 Unisonic Technologies |
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| 8 | 20N60A4D | HGTG20N60A4D HGTG20N60A4D
Data Sheet February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on |
 Fairchild Semiconductor |
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| 7 | 20N60B | Hiperfast(tm) Igbt HiPerFASTTM IGBT
IXGA 20N60B IXGP 20N60B
VCES IC25 VCE(sat)typ tfi
= 600 V = 40 A = 1.7 V = 100 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (T |
 IXYS Corporation |
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| 6 | 20N60BD1 | Hiperfast(tm) Igbt HiPerFASTTM IGBT with Diode
IXGH 20N60BD1 IXGT 20N60BD1
VCES IC25 VCE(sat)typ tfi(typ)
= = = =
600 40 1.7 100
V A V ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Tra |
IXYS Corporation |
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