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1SS198  

Hitachi Semiconductor
Hitachi Semiconductor

1SS198

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high




관련 부품 1SS1 상세설명

1SS181  

  
High Speed Switching Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Low Forward Voltage x Low Leakage Current x Surface Mount SOT-23 Package • Epoxy meets UL 94 V-0 flammability rating • Moisture Sens



MCC
MCC

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1SS187  

  
DIODE

RoHS 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:D3 2.9



WEJ
WEJ

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1SS15B1  

  
(1SS15x1) Schottky Rectifier

SUN RISE ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1SS15A1 / 1SS15B1 / 1SS15C1 SCHOTTKY RECTIFIER Features · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance SOD-123 2.70 1.6 Unit:mm Maximum Ratings @ TA = 25°C unless ot



ETC
ETC

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1SS15A1  

  
(1SS15x1) Schottky Rectifier

SUN RISE ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1SS15A1 / 1SS15B1 / 1SS15C1 SCHOTTKY RECTIFIER Features · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance SOD-123 2.70 1.6 Unit:mm Maximum Ratings @ TA = 25°C unless ot



ETC
ETC

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1SS146  

  
Small Signal Switching Diodes

1SS141-1SS147 Small Signal Switching Diodes DO - 35(GLASS) Features Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 Mechanical Data Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams Mounting



LGE
LGE

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1SS196  

  
DIODE

RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:G3 2.9



WEJ
WEJ

PDF




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