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1SS196 PDF 데이터시트



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1SS196 데이터시트 검색 결과

번호 파트넘버 1SS196 기능 및 상세설명 제조사 PDF
10 1SS196     DIODE

RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.
WEJ
WEJ
1SS196
9 1SS196     SILICON EPITAXIAL PLANAR DIODE

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 1SS196 Ultra High-Speed Switching Applications Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT =
Toshiba Semiconductor
Toshiba Semiconductor
1SS196
8 1SS196     SILICON EPITAXIAL PLANAR DIODE

1SS196 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum
SEMTECH
SEMTECH
1SS196
7 1SS196     Surface mount switching diode

BL Galaxy Electrical Production specification Surface mount switching diode FEATURES z Low forward voltage Pb VF(3)=0.9V(typ). z Fast switching. Lead-free z Fast reverse recovery time:trr=1.6ns(typ) 1SS196 APPLICATIONS z High speed switching applicat
Galaxy Semi-Conductor
Galaxy Semi-Conductor
1SS196
6 1SS196     Surface Mount Switching Diodes

Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * T
WEITRON
WEITRON
1SS196
5 1SS196     SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 G3 SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Rever
JCET
JCET
1SS196
4 1SS196     SWITCHING DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS196 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC M
RECTRON
RECTRON
1SS196
3 1SS196     Switching Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • Low Leakage Current • Surface Mount SOT-23 Package • Epoxy meets UL 94 V-0 flammab
MCC
MCC
1SS196


전자부품 판매 정보

국내 판매점 디바이스마트 IC114 엘레파츠 ICbanQ
해외 판매점 Mouser Electronics DigiKey Electronics Element14
전력반도체 전문 판매 ( IGBT 모듈, TR 모듈, SCR 모듈, 다이오드 모듈 ) 및 공작기계 매입 : 010-3582-2743

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