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Datasheet 1N5913B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 15 | 1N5913B | Diode ( Rectifier ) |
 American Microsemiconductor |
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| 14 | 1N5913B | SILICON ZENER DIODES www.eicsemi.com
1N5913B - 1N5956B
VZ : 3.3 - 200 Volts PD : 1.5 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic * Epoxy : UL94V-0 rate flame retard |
 EIC |
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| 13 | 1N5913B | 3W SILICON ZENER DIODES 1N5913B...1N5956B
3 W SILICON ZENER DIODES
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Steady State Power Dissipation at TL = 75 OC, Lead Length = 3/8" Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 200 mA
Max. 0.7
Max. 2. |
 SEMTECH |
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| 12 | 1N5913B | SILICON ZENER DIODE 1N5913B THRU 1N5956B SILICON ZENER DIODE 1.5 WATT, 3.3 THRU 200 VOLTS
Central
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5913B series silicon Zener diode is a high quality voltage regulator designed for use in automotive, industrial, commercial, entertainment and |
 Central Semiconductor |
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