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Datasheet 1N5711W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 1N5711W | DIODE RoHS
1N5711W
TDFeatures .,L· Low Forward Voltage Drop
· Guard Ring Construction for Transient Protection
· Fast Switching Time
O· Low Reverse Capacitance
· Surface Mount Package Ideally Suited for
IC CAutomatic Insertion
1.6
SOD-123
2.70 3.70
0.55
1.05
ONMaximum Ratings @ TA = 25°C unle |
 WEJ |
 |
| 4 | 1N5711W | Surface Mount Schottky Barrier Diode 1N5711W
Surface Mount Schottky Barrier Diode
Voltage Range 70 Volts
250m Watts Power Dissipation
SOD-123
Features
Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion
Mecha |
 LGE |
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| 3 | 1N5711W | Surface Mount Schottky Barrier Diode 1N5711W
Surface Mount Schottky Barrier Diode
Features
Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion
Mechanical Data
Voltage Range 70 Volts
250m Watts Power Dissipat |
 Taiwan Semiconductor |
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| 2 | 1N5711W | SURFACE MOUNT SCHOTTKY BARRIER DIODE Features
• Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
1N5711W
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 Diodes Incorporated |
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| Número de pieza | Descripción | Fabricantes | |
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