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Datasheet 1N4007GP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N4007GP | General Purpose Rectifiers 1N4001GP-1N4007GP
1N4001GP - 1N4007GP
Features • Low forward voltage drop. • High surge current capability. • High reliability. • High current capability.
DO-41
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise |  Fairchild Semiconductor | rectifier |
| 2 | 1N4007GP | Glass Passivated Junction Rectifier 1N4001GP thru 1N4007GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
SUPERECTIFIER®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM (8.3 ms sine-wave)
30 A
IFSM (square wave tp = 1 ms)
45 A
IR 5.0 μA
VF 1.1 V
TJ max.
175 °C
TYPICAL |  Vishay | rectifier |
| 3 | 1N4007GP | Glass Passivated Silicon Rectifier Diodes 1N4001GP ... 1N4007GP
1N4001GP ... 1N4007GP
62.5 -+40..55
Type
5.1-0.1
Version 2013-02-20
Ø 2.6±0.1
Ø 0.77±0.07
Glass Passivated Silicon Rectifier Diodes Glaspassivierte Silizium-Gleichrichterdioden
Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Pl |  Diotec | rectifier |
| 4 | 1N4007GP | Glass PassivatedRectifier MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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Features
• Glass Passivated Junction • Low Current Leakage and Low Cost • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compl |  MCC | rectifier |
| 5 | 1N4007GP | SINTERED GLASS JUNCTION PLASTIC RECTIFIER 1N4001GP THRU 1N4007GP
SINTERED GLASS JUNCTION
PLASTIC RECTIFIER
VOLTAGE: 50 TO 1000V
CURRENT: 1.0A
FEATURE
High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed |  Gulf Semiconductor | rectifier |
1N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N40 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N40 | N-CHANNEL POWER MOSFET 1N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
1A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta  Unisonic Technologies mosfet | | |
| 3 | 1N4000 | 10 WATT ZENER DIODES 1N2970 thru 1N3015B and 1N3993 thru 1N4000A
10 WATT ZENER DIODES
SCOTTSDALE DIVISION
DESCRIPTION These high power 10 W Zener diodes represented by the JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of v  Microsemi Corporation diode | | |
| 4 | 1N4000 | Zener Diode, Rectifier S O LID
STAT E
INC.
1N3993 – 1N4000
Your TOTAL solutions source!
10 WATTS ZENER DIODES
DO4
ZENER DIODES Low-voltage, alloy-junction zener diodes in hermetically sealed package with cathode connected to case. Polarity: Cathode-to-case (reverse polarity units are available and designed by an "  SOLID STATE diode | | |
| 5 | 1N4000 | 10W Zener Diodes http://www.Datasheet4U.com
 Motorola Semiconductors diode | | |
| 6 | 1N4000 | Diode Zener Single 7.5V 20% 10W 2-Pin DO-4 New Jersey Semiconductor diode | | |
| 7 | 1N4000-1 | Diode Zener Single 7.5V 10% 10W 2-Pin DO-4 New Jersey Semiconductor diode | |
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