1N3891R
America Semiconductor
(1N3889 - 1N3893R) Silicon Fast Recovery DiodeFree Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
1N3891R
DSI
DIODETechnical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 10 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Res
1N3891R
International Rectifier
FAST RECOVERY DIODESFAST RECOVERY DIODES
Bulletin PD-2.030 revG 01/05
1N3879(R), 1N3889(R) 6/ 12/ 16FL(R) SERIES
Stud Version
Major Ratings and Characteristics
Parameters
1N3879- 1N38891N3883 1N3893
6FL
12FL 16FL Units
IF(AV)@ TC = 100°C 6 * 12 * 6 12 16 A
IF(RMS)
9.5 1
1N3891R
Microsemi
FAST RECOVERY RECTIFIERS1N3889 – 1N3891, 1N3893
Available on commercial
versions
FAST RECOVERY RECTIFIERS
Qualified per MIL-PRF-19500/304*
DESCRIPTION
This 1N3889 – 1N3891 and 1N3893 family of rectifier devices are suitable for applications in DC power supplies, inverters, con
1N3891R
GeneSiC
Silicon Fast Recovery DiodeSilicon Fast Recovery Diode
Features • High Surge Capability • Types up to 400 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3889 thru 1N3893R
VRRM = 50 V - 400 V IF =