1N3883R
America Semiconductor
(1N3879 - 1N3883R) Silicon Fast Recovery DiodeFree Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
1N3883R
International Rectifier
FAST RECOVERY DIODESFAST RECOVERY DIODES
Bulletin PD-2.030 revG 01/05
1N3879(R), 1N3889(R) 6/ 12/ 16FL(R) SERIES
Stud Version
Major Ratings and Characteristics
Parameters
1N3879- 1N38891N3883 1N3893
6FL
12FL 16FL Units
IF(AV)@ TC = 100°C 6 * 12 * 6 12 16 A
IF(RMS)
9.5 1
1N3883R
GeneSiC
Silicon Fast Recovery DiodeSilicon Fast Recovery Diode
Features • High Surge Capability • Types up to 400 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3879 thru 1N3883R
VRRM = 50 V - 400 V IF =