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FEATURES 1N3595-1 • 1N3595-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/241 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 1S: Surge Curre
FEATURES 1N3595UR-1 • 1N3595UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3595, & MLL3595 19500/241 SWITCHING MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperat
Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 1 µs Max. Power Dissipation (PT) at TA = 25° C Max. Thermal Resistance (Rth J-A) Max. Junction Tempe
1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second
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