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Datasheet 1N23WE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 1N23WE | Diode ( Rectifier ) |
 American Microsemiconductor |
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| 2 | 1N23WE | SILICON MIXER DIODE 1N23WE
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
• High burnout resistance • Low noise figure • Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG
O O
20 mA |
 Advanced Semiconductor |
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| 1 | 1N23WE | DIODE Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (T |
 DSI |
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