16N50C3
Infineon Technologies
SPP16N50C3SPP16N50C3 SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
560 0.28 16
V Ω A
• Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
• Extr
16N50C
SIHF16N50Cwww.partnumber.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
TO-220AB TO-220 FULLPAK
FEATURES
560 V VGS = 10 V 68 17.6 21.8 Single
D
• Low Figure-of-Merit Ron x Qg
0.38
• 1
Vishay Siliconix
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16N50
N-CHANNEL POWER MOSFETUNISONIC TECHNOLOGIES CO., LTD 16N50
Preliminary Power MOSFET
16 Amps, 500 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-
Unisonic Technologies
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