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Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 160NDD Maximum Ratings (TA = 250C unless otherwise noted) Parame
Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 1 160NTD Maximum Ratings (TA = 250C unless otherwise noted)
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh™ low voltage Power MOSFET TARGET SPECIFICATION General features Type STB160N75F3 STP160N75F3 STW160N75F3 VDSS 75V 75V 75V RDS(on) 4.2mΩ 4.5mΩ 4.5mΩ ID 120A (1) 3 120A (1) 120A (1) 1 2 T
SGL160N60UFD SGL160N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching i
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PartNumber.co.kr | 2020 | 연락처 |