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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N05 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching
AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all c
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N06 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching
UNISONIC TECHNOLOGIES CO., LTD 15N06 15A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 1 1 Power MOSFET TO-220 The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all commercialindustr
AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A ▼ Fast Switching G S Description The TO-252 package is universally preferred for all commercialindustrial
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