파트넘버.co.kr 13N10 데이터시트 검색

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13N10  

Fairchild Semiconductor
Fairchild Semiconductor

13N10

FQB13N10

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced te




관련 부품 13N 상세설명

13N90  

  
N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N90 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply ·DC-



Inchange Semiconductor
Inchange Semiconductor

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13N40K-MT  

  
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40K-MT Preliminary 13A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in a



Unisonic Technologies
Unisonic Technologies

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13N60M2-045Y  

  
N-CHANNEL POWER MOSFET

STF13N60M2(045Y) N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram Order codes STF13N60M2(045Y) VDS @ TJmax 650 V RDS(on) max 0.38 Ω ID 11 A �



STMicroelectronics
STMicroelectronics

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13N40  

  
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary 13A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-st



Unisonic Technologies
Unisonic Technologies

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13NB60  

  
STW13NB60

STW13NB60 ® STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE VDSS RDS(on) ID ST W13 NB6 0 600 V <0.54 Ω 13 A www.partnumber.co.krSoTmH13 NB 6 0F I 600 V <0.54 Ω 8.6 A s TYPICAL RDS(on) = 0.48 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALAN



STMicroelectronics
STMicroelectronics

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13N40  

  
N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N40 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·



Inchange Semiconductor
Inchange Semiconductor

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