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12N65(F,B,H) 12A mps,650 Volts N-CHANNEL MOSFET FEATURE 12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 12N65 ITO-220AB 12N65F TO-263 12N65B TO-262 12N65H Absolute Maximum Ratings(TC=25
12N65(F,B,H) 12A mps,650 Volts N-CHANNEL MOSFET FEATURE 12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 12N65 ITO-220AB 12N65F TO-263 12N65B TO-262 12N65H Absolute Maximum Ratings(TC=25
SEMICONDUCTOR I2N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 650Volts DESCRIPTION The Nell 12N65 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. thres
UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficienc
12N65(F,B,H) 12A mps,650 Volts N-CHANNEL MOSFET FEATURE 12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 12N65 ITO-220AB 12N65F TO-263 12N65B TO-262 12N65H Absolute Maximum Ratings(TC=25
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thre
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