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Datasheet 10N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 10N80 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
10N80
·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.95Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Req |
 Inchange Semiconductor |
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| 2 | 10N80 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N80
800V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load |
 Unisonic Technologies |
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| 1 | 10N80 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
10N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 10A, 800Volts
DESCRIPTION
The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max. thre |
 nELL |
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