|
UNISONIC TECHNOLOGIES CO., LTD 10N70Z-Q Preliminary 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rug
UNISONIC TECHNOLOGIES CO., LTD 10N70K 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N70K is generally applied in high
UNISONIC TECHNOLOGIES CO., LTD 10N70Z 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UT C 10N70Z is a high voltage and high curr ent po wer MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and have a high r
UNISONIC TECHNOLOGIES CO., LTD 10N70T 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION Preliminary Power MOSFET The UT C 10N70T is a high voltage and high curr ent po wer MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and h
UNISONIC TECHNOLOGIES CO., LTD 10N70-C 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche cha
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 10N70 ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive R
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |