Datasheet 10N65 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	10N65	N-CHANNEL MOSFET 10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N65 ITO-220AB 10N65F TO-263 10N65B TO-262 10N65H Absolute Maximum Ratings(TC=2	CHONGQING PINGYANG	mosfet
2	10N65	N-CHANNEL MOSFET 10N65 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 主要参数 MAIN CHARACTERISTICS 封装 Package ID 9.5 A VDSS 650 V Rdson（@Vgs=10V） 0.95Ω Qg 34 nC 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power supplies z Electronic	LONG-SEMI	mosfet
3	10N65	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N65 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characterist	Unisonic Technologies	mosfet
4	10N65-C	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av	Unisonic Technologies	mosfet
5	10N65-Q	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N65-Q 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65-Q is generally applied in h	Unisonic Technologies	mosfet

10N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	10N03L	IPP10N03L IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance	Infineon Technologies AG	data
2	10N120BND	HGTG10N120BND Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol	Fairchild Semiconductor	data
3	10N15	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS  DESCRIPTION The UTC 10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc. The	Unisonic Technologies	mosfet
4	10N20	FQB10N20 www.datasheet4u.com ! "	Fairchild Semiconductor	data
5	10N20C	FQP10N20C FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially ta	Fairchild Semiconductor	data
6	10N30	300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a	Unisonic Technologies	mosfet
7	10N361K	JVR10N361K METAL OXIDE VARISTOR 10mm Disc Maximum Allowable Voltage Part Number Acrms JVR10N180M87orr JVR10N220L87orr JVR10N270K87orr JVR10N330K87orr JVR10N390K87orr JVR10N470K87orr JVR10N560K87orr JVR10N680K87orr JVR10N820K87orr JVR10N101K87orr JVR10N121K87orr JVR10N151K87orr JVR10N181K87orr JVR10N201K87orr J	RFE international	data

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Número de pieza	Descripción	Fabricantes	PDF
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