파트넘버.co.kr 09N20 데이터시트 검색

09N20 전자부품 데이터시트



09N20 전자부품 회로 및
기능 검색 결과



09N20  

GTM
GTM

09N20

GI09N20

Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device desi




관련 부품 09N 상세설명

09N4268  

  
ThinkPad Hard Disk Drive

ThinkPad Hard Disk Drive User’s Guide Note: Before using this information and the product it supports, read the information in Appendix A, “Warranty information”, Appendix B, “European Union warranty information”, and Appendix C, “Notices”. Second Edition (February 2003) © Copyright



ETC
ETC

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09N4268  

  
ThinkPad Hard Disk Drive

ThinkPad Hard Disk Drive User’s Guide Note: Before using this information and the product it supports, read the information in Appendix A, “Warranty information”, Appendix B, “European Union warranty information”, and Appendix C, “Notices”. Second Edition (February 2003) © Copyright



ETC
ETC

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09N05  

  
SPD09N05

SPD 09N05 SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated • dv/dt • 175˚C operating temper



Infineon
Infineon

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09N70P  

  
AP09N70P

AP09N70P/R Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D D BVDSS RDS(ON) ID 600/675V 0.75Ω 9A Description AP09N70 series are specially designed as main



Advanced Power Electronics
Advanced Power Electronics

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09N03  

  
PJD09N03

www.partnumber.co.kr PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and



Pan Jit International
Pan Jit International

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09N90E  

  
FMH09N90E

FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI PO



Fuji Electric
Fuji Electric

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