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ThinkPad Hard Disk Drive User’s Guide Note: Before using this information and the product it supports, read the information in Appendix A, “Warranty information”, Appendix B, “European Union warranty information”, and Appendix C, “Notices”. Second Edition (February 2003) © Copyright
ThinkPad Hard Disk Drive User’s Guide Note: Before using this information and the product it supports, read the information in Appendix A, “Warranty information”, Appendix B, “European Union warranty information”, and Appendix C, “Notices”. Second Edition (February 2003) © Copyright
SPD 09N05 SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated • dv/dt • 175˚C operating temper
AP09N70P/R Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D D BVDSS RDS(ON) ID 600/675V 0.75Ω 9A Description AP09N70 series are specially designed as main
www.partnumber.co.kr PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and
FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI PO
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