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Datasheet 02N60S5 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 02N60S5 | SPN02N60S5 SPN02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
VDS RDS(on) ID
600 3 0.4
SOT-223
4
V Ω A
low effective capacitances
• Improved transconductance
2 1
3
VPS05163
Typ |  Infineon Technologies | data |
02N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 02N120 | SKP02N120 www.DataSheet4U.net
SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very Infineon Technologies data | | |
| 2 | 02N50C3 | SPD02N50C3 &RRO026 3RZHU7UDQVLVWRU
)HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG •([WUHPHGYGWUDWHG • 8OWUDORZHIIHFWLYHFDSDFLWDQFHV • ,PSURYHGWUDQVFRQGXFWDQFH
63'1&
VDS#Tjmax 5'6 RQ ,'
9 Ω $
3G722
7\SH Infineon Technologies data | | |
| 3 | 02N60P | SSM02N60P
SSM02N60P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Repetitive-avalanche rated Fast-switching Simple drive requirement
G D
BV DSS RDS(ON) ID TO-220
600V 8Ω 2A
Description
S
The TO-220 package is widely preferred for commercial and industrial applications. The SSM02N60P is we  ETC data | | |
| 4 | 02N60S5 | SPN02N60S5 SPN02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
VDS RDS(on) ID
600 3 0.4
SOT-223
4
V Ω A
low effective capacitances
• Improved transconductance
2 1
3
VPS05163
Typ Infineon Technologies data | | |
| 5 | 02NR | Connector JST connector | |
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