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600 Watt Peak Power Zener Transient Voltage Suppressors



ON Semiconductor 로고
ON Semiconductor
NS6A58AFT3G 데이터시트, 핀배열, 회로
NS6A5.0AFT3G,
SZNS6A5.0AFT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional
The NS6AxxAFT3G series is designed to protect voltage sensitive
components from high voltage, high energy transients. This device
has excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NS6AxxAFT3G series is
ideally suited for use in computer hard disk drives, communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:
Peak Reverse Working Voltage Range − 5 V to 64 V
Peak Pulse Power of 600 W (10 x 1000 msec)
ESD Rating of Class 3 (>16 kV) per Human Body Model
ESD Rating of Class 4 (>8 kV) IEC 61000−4−2
Fast Response Time
Low Profile Package
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
Cathode
Anode
SMA−FL
CASE 403AA
MARKING DIAGRAM
xxx
AYWWG
xxx = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NS6AxxAFT3G,
SMA−FL 5000 / Tape &
SZNS6AxxAFT3G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
NS6A5.0AF/D


NS6A58AFT3G 데이터시트, 핀배열, 회로
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK 600 W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
RqJL
1.5 W
20 mW/°C
50 °C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.5 W
4.0 mW/°C
250 °C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM 40 A
Operating and Storage Temperature Range
TJ, Tstg
−65 to +150
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IF Forward Current
VF Forward Voltage @ IF
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
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2




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600 Watt Peak Power Zener Transient Voltage Suppressors - ON Semiconductor