BF995 반도체 회로 부품 판매점
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners)
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 Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode
q For input and mixer stages in FM and
VHF TV tuners
BF 995
Type
BF 995
Marking
MB
Ordering Code
(tape and reel)
Q62702-F936
Pin Configuration
1 2 34
S D G2 G1
Package1)
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate 1/gate 2 peak source current
Total power dissipation, TS < 76 ˚C
Storage temperature range
Channel temperature
Symbol
VDS
ID
I± G1/2SM
Ptot
Tstg
Tch
Values
Unit
20 V
30 mA
10
200 mW
– 55 … + 150 ˚C
150
Thermal Resistance
Junction - soldering point
Rth JS
< 370
K/W
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
07.94
BF 995
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, – VG1S = – VG2S = 4 V
Gate 1 source breakdown voltage
± IG1S = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage
± IG2S = 10 mA, VG1S = VDS = 0
Gate 1 source leakage current
± VG1S = 5 V, VG2S = VDS = 0
Gate 2 source leakage current
± VG2S = 5 V, VG1S = VDS = 0
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
Gate 1 source pinch-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 µA
Gate 2 source pinch-off voltage
VDS = 15 V, VG1S = 0, ID = 20 µA
Symbol
Values
Unit
min. typ. max.
V(BR) DS
20
V± (BR) G1SS 8.5
V± (BR) G2SS 8.5
± IG1SS
–
± IG2SS
–
IDSS
4
– VG1S (p)
–
– VG2S (p)
–
–
–
–
–
–
–
–
–
–V
14
14
50 nA
50
20 mA
2.5 V
2.0
Semiconductor Group
2
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( siemens )
BF995 tv
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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