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T850-600G 반도체 회로 부품 판매점

HIGH PERFORMANCE TRIAC



STMicroelectronics 로고
STMicroelectronics
T850-600G 데이터시트, 핀배열, 회로
T835-600G
® T850-600G
HIGH PERFORMANCE TRIAC
FEATURES
HIGH COMMUTATION PREFORMANCES
SNUBBERLESSTM TECHNOLOGY
HIGH NOISE IMMUNITY (dV/dt)
HIGH ITSM
DESCRIPTION
The T835-600G and T850-600G triacs are using
high performance SNUBBERLESS technology.
They are intended for AC control applications
using surface mount tecnology.
These devices are perfectly suited where high
commutation and surge performances are
required.
A2
A2 G
A1
D2PAK
ABSOLUTE RATINGS (limiting values)
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
T
Parameter
Repetitive peak off-state voltage
Tj = 125°C
RMS on-state current
(360° conduction angle)
Tc= 110°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t Value for fusing
tp = 8.3ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
Non Repetitive
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
Value
600
Unit
V
8A
85 A
80
32 A2s
20 A/µs
100
- 40, + 150
- 40, + 125
260
°C
°C
May 1998 - Ed: 3A
1/5


T850-600G 데이터시트, 핀배열, 회로
T835-600G / T850-600G
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Parameter
Junction to ambient (S = 1 cm2)
Junction to case for DC
Junction to case for AC 360° conduction angle (F=50Hz)
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
Value
45
2.1
1.6
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T835 T850 Unit
IGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MIN 2 mA
MAX 35 50
VGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX
1.3
V
VGD VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
IH * IT= 100mA Gate open
Tj= 25°C
MAX 35 50 mA
IL IG = 1.2 IGT
Tj = 25°C I-III MAX 50 60 mA
II MAX 80 100
VTM * ITM= 11A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
VD = VDRM
Tj= 25°C
MAX
5
µA
IRRM
VR = VRRM
Tj= 125°C
MAX
2
mA
dV/dt * Linear slope up to VD=67%VDRM Tj= 125°C
Gate open
MIN 500 1000 V/µs
(dI/dt)c * Without snubber
Tj= 125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN 4.5 7 A/ms
ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment
T
TRIAC
CURRENT
8 35 - 600
SENSITIVITY
G
PACKAGE :
G = D2PAK
VOLTAGE
2/5




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T850-600G triac

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T850-600G

HIGH PERFORMANCE TRIAC - STMicroelectronics