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Número de pieza | T8T | |
Descripción | Triac | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! T8T
Snubberless™, logic level and standard 8 A Triacs
Features
■ Medium current Triac
■ High static and dynamic commutation
■ Low thermal resistance with clip bonding
■ Packages is RoHS (2002/95/EC) compliant
■ 600 V VRM
■ UL certified (ref. file E81734)
Applications
■ Value sensitive application
■ General purpose ac line load switching
■ Motor control circuits in power tools
■ Small home appliances, lighting
■ Inrush current limiting circuits
■ Overvoltage crowbar protection
Description
Available in through-hole, the T8T series of Triacs
can be used as on/off or phase angle control
function in general purpose ac switching where
high commutation capability is required.
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
A2
G
A1
A1
A2
G
TO-220AB insulated
(T8xxT-6I)
Table 1. Device summary
Order code
Symbol
T810T-6I
IGT 3Q
logic level
T820T-6I
T835T-6I
IGT 3Q
Snubberless
T825T-6I
IGT 4Q
standard
Value
10 mA
20 / 35 mA
25 mA
TM: Snubberless is a trademark of STMicroelectronics
September 2011
Doc ID 16192 Rev 3
1/9
www.st.com
9
1 page T8T Characteristics
Figure 7.
Non repetitive surge peak on-state Figure 8.
current for a sinusoidal
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
ITSM(A), I²t (A²s)
1000
dl /dt limitation: 50 A / µs
Tj initial = 25 °C
ITSM
IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
3.0
2.5 IGT Q3
IGT Q1-Q2
2.0
typical values
100 1.5
I²t
pulse with width tp<10 ms, and corresponding value of I²t
10
0.01
0.10
1.00
tp(ms)
10.00
1.0 IGT Q1-Q2-Q3
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75 100 125
Figure 9.
Relative variation of holding
Figure 10. Relative variation of static dV/dt
current and latching current versus
immunity versus junction
junction temperature
temperature
IH, IL[Tj] / IH, IL[Tj = 25 °C]
2.0
1.5
typical values
7 dV / dt [Tj] / dV / dt [Tj = 125 °C]
6
5
VD = VR = 402 V
4
1.0
3
IL 2
0.5
IH 1
Tj(°C)
0.0
0
Tj(°C)
25 50 75 100 125
-50 -25
0
25 50 75 100 125
Figure 11. Relative variation of critical rate of
decrease of main current versus
junction temperature
6 (dl / dt)c [Tj] / (dl / dt)c [Tj = 125 °C]
5
Figure 12. Relative variation of leakage
current versus junction
temperature
IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM
1.0E+00
[Tj = 125 °C; 600 V]
VDRM = VRRM = 600 V
4
1.0E-01
VDRM = VRRM = 400 V
3
2
1.0E-02
VDRM = VRRM = 200 V
1
for different values of blocking voltage
0
Tj(°C)
1.0E-03
Tj(°C)
25 50 75 100 125
25 50 75 100 125
Doc ID 16192 Rev 3
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet T8T.PDF ] |
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