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BCR25FM-14LJ 반도체 회로 부품 판매점

Triac



Renesas 로고
Renesas
BCR25FM-14LJ 데이터시트, 핀배열, 회로
BCR25FM-14LJ
700V - 25A - Triac
Medium Power Use
Preliminary Datasheet
R07DS1223EJ0100
Rev.1.00
Jul 25, 2014
Features
IT (RMS) : 25 A
VDRM : 800 V (Tj=125°C)
Tj: 150 °C
IFGTI, IRGTI, IRGT III : 50 mA
Outline
Insulated Type
Planar Passivation Type
Viso : 2000V
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
1
23
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
800
700
840
Unit Conditions
V Tj = 125°C
Tj = 150°C
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
25
250
262
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 60°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 T2 G terminal to case
R07DS1223EJ0100 Rev.1.00
Jul 25, 2014
Page 1 of 7


BCR25FM-14LJ 데이터시트, 핀배열, 회로
BCR25FM-14LJ
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
On-state voltage
Gate trigger voltageNote2
Gate trigger curentNote2
VTM
Ι VFGTΙ
ΙΙ VRGTΙ
ΙΙΙ VRGTΙΙΙ
Ι IFGTΙ
ΙΙ IRGTΙ
ΙΙΙ IRGTΙΙΙ
Min.
Typ.
Max.
3.0
5.0
1.5
2.0
2.0
2.0
50
50
50
Unit
mA
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 125°C, VDRM applied
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 40 A,
instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage
VGD 0.2 —
V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance
0.1 —
V Tj = 150°C, VD = 1/2 VDRM
Rth (j-c)
3.0 °C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c 10
— V/μs Tj = 125°C
commutation voltageNote4
1 — — V/μs Tj = 150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage are shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it’s advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –13 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1223EJ0100 Rev.1.00
Jul 25, 2014
Page 2 of 7




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