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PDF BCR20KM Data sheet ( Hoja de datos )
| Número de pieza | BCR20KM | |
| Descripción | TRIAC | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
BCR20KM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
q IT (RMS) ................................................................ 20A
q VDRM ................................................................. 600V
q IFGT !, IRGT ! , IRGT # .................................... 20mA
q Viso ................................................................. 2000V
q UL Recognized: Yellow Card No.E80276(N)
File No. E80271
➀➁➂
✽ Measurement point of
case temperature
➁
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ ➂ GATE TERMINAL
➀
TO-220FN
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage✽1
Non-repetitive peak off-state voltage✽1
Voltage class
12
600
720
Unit
V
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=85°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
20
200
167
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Mar. 2002
1 page  
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
140
TYPICAL EXAMPLE
120 Tj = 125°C
100 III QUADRANT
80
60
40 I QUADRANT
20
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
102
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
3
MAIN
VOLTAGE
2 (dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
101 f = 3Hz
7
5 MINIMUM
CHARAC-
3 TERISTICS
2 VALUE
III QUADRANT
I QUADRANT
100
7
3
5 7 101
2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7 TYPICAL EXAMPLE
5
3
2 IFGT I
IRGT I
IRGT III
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V 330Ω
V 330Ω
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V 330Ω
TEST PROCEDURE 3
Mar. 2002
5 Page 
The product guaranteed maximum junction
temperature 150°C (See warning.)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V 330Ω
V 330Ω
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V 330Ω
TEST PROCEDURE 3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
LOAD
C1
R1 C0 R0
C1 = 0.1~0.47µF
R1 = 47~100Ω
C0 = 0.1µF
R0 = 100Ω
Mar. 2002
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BCR20KM.PDF ] | |
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